STMicroelectronics : Researchers from STMicroelectronics and CEA-Leti Receive 2012 Général Ferrié Grand Prize Award
(Thomson Reuters ONE) -
Highest Honor for Electronics R&D in France Recognizes Work on Next-Generation
Semiconductor Process Technology
CROLLES, France - December 5, 2012 - STMicroelectronics (NYSE: STM), a global
semiconductor leader serving customers across the spectrum of electronics
applications, and CEA-Leti, France's premier research and technology institute,
announced that a team of ST and CEA-Leti researchers had received the 2012
Général Ferrié Award.
Considered to be the highest award in electronics R&D in France, the Général
Ferrié annual award honors an engineer or a scientific team whose work has made
a significant contribution to the progress of electronics and its applications.
The team members presented were Claire Fenouillet-Béranger and Olivier Faynot
from Leti, and Stéphane Monfray and Frédéric Boeuf from ST. They were honored
for their work on FD-SOI (Fully Depleted Silicon-On-Insulator) technology, which
is a major technological breakthrough in the pursuit of miniaturization of
electronic circuits.
Since the beginning of the 1960s, the chip industry's efforts to meet the
growing demand for computing power have followed Moore's Law, which recognized
that the number of transistors on integrated circuits doubles approximately
every two years.
However, the industry today faces a major constraint: the growing difficulty to
control the electrical behavior of transistors once their size shrinks below
100nm. Work begun around the turn of the century by the advanced-modules teams
at ST and Leti has made it possible to quantify the improvement that new methods
bring to conventional transistor performance.
Over time, the idea of making transistors on a substrate of ultra-thin silicon
resting on an insulator was developed as an alternative to making transistors on
thicker silicon without the insulator. The result was Fully Depleted Silicon-On-
Insulator (FD-SOI). This planar technology uses manufacturing processes that are
already in place for conventional technologies. Other approaches, including one
calledFinFET, require disruptive changes to design techniques and process
technologies because it relies on 3-D transistors.
In fact, the four researchers were able to validate the technological choice for
FD-SOI, while also enabling its industrialization. They identified three key
advantages to this approach:
* The production process is very close to that used in existing standard
technologies ("Bulk" for silicon monocrystalline substrates)
* The transfer of circuit designs from bulk to FD-SOI technology is
significantly easier than with FinFET, because the approach continues to use
a planar geometry
* This technology is very attractive for mobile applications such as
smartphones and tablets, which simultaneously require high performance and
low power consumption
"This award acknowledges more than 20 years of Leti's R&D work on SOI," said
Laurent Malier, CEO of Leti. "Leti is very proud to have succeeded in developing
this technology through to the industrial level and to have made it an excellent
candidate for components that are being integrated into mobile devices for the
ideal compromise they allow between speed and power consumption."
Thomas Skotnicki, director advanced devices, ST and IEEE Fellow, said, "The
perseverance and quality in the work of Claire, Frédéric, Olivier and Stéphane
at the heart of the advanced-component teams, demonstrated different transistor
concepts for thin-film and overcame all obstacles to industrialization."
ST Executive Vice President Joël Hartmann, head of front-end manufacturing and
process R&D, Digital Sector, added: "In an industry of fierce global competition
striving to continually miniaturize components, I am particularly proud to see
this long cooperation between CEA and ST rewarded."
The Dec. 3 awards ceremony was presided over by Paul Friedel, president of SEE
(Société de l'Electricité, de l'Electronique et des Technologies de
l'Information et la Communication) and Erich Spitz of the Academy of Sciences
and the Academy of Technologies, and president of the Committee for Awards and
Distinctions.
The award honors the memory of Gustave-Auguste Ferrié (1868-1932), who was an
engineer, French general, and pioneer in radio diffusion. He was responsible for
the installation of the radio-emitting station on the Eiffel Tower in 1904. In
1917, his devices enabled the interception of messages from spy Mata Hari and
helped end her espionage activities.
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power technologies and multimedia convergence
applications. From energy management and savings to trust and data security,
from healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.
In 2011, the Company's net revenues were $9.73 billion. Further information on
ST can be found at www.st.com.
About CEA-Leti
Leti is an institute of CEA, a French research-and-technology organization with
activities in energy, IT, healthcare, defence and security. Leti is focused on
creating value and innovation through technology transfer to its industrial
partners. It specializes in nanotechnologies and their applications, from
wireless devices and systems, to biology, healthcare and photonics. NEMS and
MEMS are at the core of its activities. An anchor of the MINATEC campus, CEA-
Leti operates 8,000-m² of state-of-the-art clean room space on 200mm and 300mm
wafer platforms. It employs 1,700 scientists and engineers including 240 Ph.D.
students and 200 assignees from partner companies. CEA-Leti owns more than
1,880 patent families.
For more information, visit www.leti.fr.
Press contacts
CEA-Leti +33 4 38 78 31 95
thierry.bosc(at)cea.fr
STMicroelectronics +33 1 58 07 75 96
pascal.boulard(at)st.com
Agency +33 1 58 18 50 30
griffins(at)loomisgroup.fr
Ferrié Award:
http://hugin.info/152740/R/1662805/539108.pdf
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Source: STMicroelectronics via Thomson Reuters ONE
[HUG#1662805]
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Datum: 05.12.2012 - 15:01 Uhr
Sprache: Deutsch
News-ID 209985
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