STMicroelectronics Extends High-Efficiency Power Family Using New Energy-Saving Package
(Thomson Reuters ONE) -
Innovative 4-lead package of latest MDmesh(TM) V Super-Junction MOSFETs adds
dedicated control input for increased switching efficiency
Geneva, May 6, 2013 - STMicroelectronics (NYSE: STM), a global semiconductor
leader serving customers across the spectrum of electronics applications, has
introduced the first MDmesh(TM) V Super-Junction MOSFET featuring a new package
technology that increases the efficiency of power circuitry in equipment such as
white goods, televisions, PCs, telecom, and server switched-mode power supplies.
The new TO247-4 4-lead package provides a direct source connection used only for
switching control, whereas conventional packages provide one connection for both
switching and power. The extra lead increases switching efficiency, which
reduces energy losses and allows higher-frequency operation for more compact
power supplies.
ST co-developed the package with Infineon, which is also introducing its own new
Super-Junction devices, providing second-source flexibility for users. "The
TO247-4 is highly cost-effective and requires only minimal modification of the
PCB layout when replacing a standard TO-247 device, which simplifies adoption in
power systems," commented Maurizio Giudice, Marketing Director, Power Transistor
Division, STMicroelectronics. "Our new MDmesh devices using this package will
enable better environmental performance of end equipment by improving energy
efficiency in active modes."
The TO247-4 package features an innovative internal construction implementing a
Kelvin connection to the source. This connection bypasses the common source
inductance of the main power connection, enabling up to 60% of switching losses
to be eliminated and allowing designers to use higher switching frequencies that
require smaller filtering components. Combining this new package with ST's
MDmesh Super-Junction technology, which achieves one of the highest conduction
efficiencies per silicon area, delivers the best possible overall energy
savings.
The device introduced today is the STW57N65M5-4. As the first MDmesh device
released in the TO247-4, it will enable increased energy efficiency in active
Power-Factor Correction (PFC) circuits and full-bridge or half-bridge power
converters for a wide variety of consumer and industrial electronic products.
Additional features of STW57N65M5-4 in TO247-4:
* High noise immunity, lowering susceptibility to Electro-Magnetic
Interference (EMI)
* Increased voltage rating for greater safety margins
* High dv/dt capability for enhanced reliability
* 100% avalanche tested, enabling use in rugged designs
The STW57N65M5-4 is in mass production now, priced from $10.00 for orders over
1,000 pieces.
For further information please refer to http://www.st.com/to247-4-pr
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a positive and
innovative contribution to people's life. By getting more from technology to get
more from life, ST stands for life.augmented.
In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at www.st.com.
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz(at)st.com
ST MDMesh MOSFET in TO-247_IMAGE:
http://hugin.info/152740/R/1699392/560561.jpg
ST MDMesh MOSFET in TO-247:
http://hugin.info/152740/R/1699392/560560.pdf
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Source: STMicroelectronics via Thomson Reuters ONE
[HUG#1699392]
Unternehmensinformation / Kurzprofil:
Datum: 06.05.2013 - 12:00 Uhr
Sprache: Deutsch
News-ID 256431
Anzahl Zeichen: 4822
contact information:
Town:
Geneva
Kategorie:
Business News
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