"Places2Be" project to boost European leadership around FD-SOI - the faster, cooler, simpler chip technology
(Thomson Reuters ONE) -
· 3-year, ?360M project involves 19 partners across Europe, led by
STMicroelectronics
· 2 FD-SOI manufacturing pilot lines to be located in Grenoble and Dresden
· Places2Be is supported by the ENIAC JU and the National Public
Authorities
Brussels, May 21 2013 - The launch of Places2Be, a 3-year, ?360M advanced-
technology pilot-line project to support the industrialization of Fully-Depleted
Silicon-On-Insulator (FD-SOI) microelectronics technology was announced today by
a group of 19 leading European companies and academic institutions.
Led by STMicroelectronics (NYSE: STM), a global semiconductor leader serving
customers across the spectrum of electronics applications,Places2Be ("Pilot
Lines for Advanced CMOS Enhanced by SOI in 2x nodes, Built in Europe") aims to
support the deployment of a FD-SOI pilot line at 28nm and the subsequent node,
as well as a dual source that will enable volume manufacturing in Europe.
Places2Be will drive the creation of a European microelectronics design
ecosystem using this FD-SOI platform and explore the path towards the next step
for this technology (14/10nm).
FD-SOI is a low-power, high-performance next-generation alternative to
conventional ("bulk") silicon and FinFET technologies. The first FD-SOI systems-
on-chips are expected to be used in consumer electronics, high-performance
computing and networking.
With a budget of nearly ?360M, the participation of 19 partners from 7
countries, and the planned involvement of about 500 engineers over three years
across Europe, Places2Be is the largest ENIAC Joint Undertaking project to date
and is supported as well by the National Public Authorities in the participating
countries. Places2Be is one of the key enabling technologies (KETs) pilot-line
projects contracted by the ENIAC JU to develop technologies and application
areas with substantial societal impact.
The FD-SOI manufacturing sources for the project are located in each of the two
largest European microelectronics clusters: the pilot line in
STMicroelectronics' Crolles fab (near Grenoble, France) and the dual source in
GlobalFoundries' fab 1 in Dresden (Germany).
"The Places2Be project will reinforce the ecosystems of both Grenoble and
Dresden clusters, while also positively impacting the whole value chain of
microelectronics in Europe - large companies, SMEs, start-ups and research
organizations - beyond the direct impact induced by the material and IP
investments," declared François Finck, Director of ST's R&D cooperative programs
and project coordinator.
Note to editors
Places2Be members (in alphabetic order)
· ACREO Swedish ICT AB, Sweden
· Adixen Vacuum Products, France
· Axiom IC, Netherlands
· Bruco Integrated Circuits, Netherlands
· Commissariat à l'énergie atomique et aux énergies alternatives, France
· Dolphin Integration, France
· Ericsson AB, Sweden
· eSilicon Romania S.r.l., Romania
· Forschungzentrum Jülich Gmbh, Germany
· GlobalFoundries Dresden, Germany
· Grenoble INP, France
· IMEC Interuniversitair Micro-Electronica Centrum vzw, Belgium
· Ion Beam Services, France
· Mentor Graphics France Sarl, France
· SOITEC SA, France
· ST-Ericsson
· STMicroelectronics (Crolles2 SAS, SA, Grenoble SAS), France
· Université Catholique de Louvain, Belgium
· University of Twente, Netherlands
Countries involved:
· Belgium
· Finland
· France
· Germany
· Romania
· Sweden
· The Netherlands
About FD-SOI
FD-SOI stands for "Fully-Depleted Silicon-On-Insulator." This technology
improves the electrostatic control of the transistor channel, improving
transistor performance and power efficiency. More precisely Places2Be uses
Ultra-Thin Body and Buried oxide (UTBB) FD-SOI, which allows the dynamic tuning
of transistor performance, from low power to high speed, during operation. A
video introduction to this technology is available on YouTube:
www.youtube.com/watch?v=S_wMzAEajO0&list=UUU5iH94nyLSQAn6SgDM9lag&index=1
About the ENIAC JU
The ENIAC Joint Undertaking (JU) is a public-private partnership on
nanoelectronics bringing together the ENIAC member States, the European Union,
and AENEAS (an association representing European R&D actors in this field).
It coordinates research activities through competitive calls for proposals to
enhance the further integration and miniaturization of devices, and increase
their functionalities. It shall deliver new materials, equipment and processes,
new architectures, innovative manufacturing processes, disruptive design
methodologies, new packaging and 'systemising' methods. It will drive and be
driven by innovative high-tech applications in communication and computing,
transport, health care and wellness, energy and environmental management,
security and safety, and entertainment.
The ENIAC JU was set up in February 2008 and will allocate grants throughout
2013. The projects selected for funding shall be executed till 31 December
2017. The total value of the R&D activities generated through ENIAC JU is
estimated at 3 B?.
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a positive and
innovative contribution to people's life. By getting more from technology to get
more from life, ST stands for life.augmented.
In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at www.st.com
For further information, please contact:
STMicroelectronics
Alexis Breton
Manager, International Media Relations
Tel: +33 6 5916 7908
alexis.breton(at)st.com
Nelly Dimey
Director, Corporate Media and Public Relations
Tel: +33 1 58 07 77 85
nelly.dimey(at)st.com
ENIAC JU
Elodie Michaud
Communication Officer
Tel : +33 1 40 64 45 80
michaud(at)aeneas-office.eu
Places2Be:
http://hugin.info/152740/R/1703181/562928.pdf
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originality of the information contained therein.
Source: STMicroelectronics via Thomson Reuters ONE
[HUG#1703181]
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Datum: 21.05.2013 - 09:00 Uhr
Sprache: Deutsch
News-ID 261796
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