Extremely Rugged LDMOS Ups the Power: NXP Unveils BLF188XR
Newest Member of Popular XR Family of RF Power Transistors for the Toughest Engineering Environments
(firmenpresse) - EINDHOVEN, THE NETHERLANDS and SEATTLE, WA -- (Marketwired) -- 06/04/13 -- NXP Semiconductors N.V. (NASDAQ: NXPI) today introduced the -- the newest member of its XR family of "eXtremely Rugged" LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression. The BLF188XR is capable of providing an outstanding 1600 W of peak output power and can operate as high as 60 V, and still pass extreme ruggedness testing. Other key features include stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation, and several enhancements that make the XR device easy to design in and tune in multiple applications.
Another interesting feature of the BLF188XR is its excellent linearity, making it a very interesting candidate for high-power linear applications. The BLF188XR is ideal for large-scale industrial, scientific and medical (ISM) applications in frequency ranges under 300 MHz, while the popular BLF578XR series is recommended for frequency ranges up to 500 MHz. NXP is showcasing the BLF188XR this week at the IEEE MTT-S International Microwave Symposium (IMS 2013), and a video of the live demo is available here:
"Our 'eXtremely Rugged' family now delivers even more ruggedness to run with the most awkward RF loads -- easily outperforming VDMOS performance, ruggedness and reliability using NXP's latest high-voltage LDMOS technology," said Mark Murphy, director of marketing, RF power business line, NXP Semiconductors. "Building on the success of the BLF578XR, the new BLF188XR extends our portfolio, and brings extra ruggedness, linearity, power and simplicity in design. And building on our proven track record as a leading RF power supplier in ISM markets, we've been able to design the BLF188XR as a highly compelling solution for a broad range of low-frequency applications, such as lasers, MRI, RF lighting and RF drying, as well as VHF/FM broadcast transmitters."
Engineering samples of the BLF188XR are now available to qualified customers.
VIDEO: NXP's eXtremely Rugged LDMOS (BLF188XR, BLF184XR):
NXP BLF188XR product information:
NXP RF Manual, 17th Edition:
NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. A global semiconductor company with operations in more than 25 countries, NXP posted revenue of $4.36 billion in 2012. Additional information can be found by visiting .
This document includes forward-looking statements which include statements regarding NXP's business strategy, financial condition, results of operations and market data, as well as other statements that are not historical facts. By their nature, forward-looking statements are subject to numerous factors, risks and uncertainties that could cause actual outcomes and results to be materially different from those projected. Readers are cautioned not to place undue reliance on these forward-looking statements. Except for any ongoing obligation to disclose material information as required by the United States federal securities laws, NXP does not have any intention or obligation to publicly update or revise any forward-looking statements after NXP distributes this document, whether to reflect any future events or circumstances or otherwise. For a discussion of potential risks and uncertainties, please refer to the risk factors listed in NXP's SEC filings. Copies of NXP's SEC filings are available from the SEC website, .
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Datum: 04.06.2013 - 12:00 Uhr
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