DGAP-News: GT Advanced Technologies Introduces Silicon Carbide Furnace
(firmenpresse) - GT Advanced Technologies
01.07.2013 14:00
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New Product Line Targets Growth Opportunities in Power Electronics Market
MERRIMACK, N.H., 2013-07-01 14:00 CEST (GLOBE NEWSWIRE) --
GT Advanced Technologies (Nasdaq:GTAT), today introduced its new SiClone(tm)100
silicon carbide (SiC) production furnace. The SiClone100 uses a sublimation
growth technique capable of producing high quality semiconducting bulk SiC
crystal that can be finished into wafers up to 100 millimeters in diameter. In
its initial offering, the SiClone100 is targeted at customers that have
developed their own hot zone, qualified a bulk crystal production recipe and
are looking to begin volume production.
'GT's new SiClone100 furnace addresses the need in the power electronics
industry for more high quality SiC material for use in advanced, high power,
high frequency devices,' said Tom Gutierrez, GT's president and CEO. 'The
SiClone100 lays the foundation for our SiC product roadmap that is expected
over time to provide customers with access to a complete production environment
including recipes, hot zones and consumables capable of producing up to
eight-inch SiC wafers.'
GT has leveraged its deep domain expertise in crystal growth technology to
offer customers who are looking to move from 'the lab to the fab' a highly
reliable and proven platform to begin volume production of SiC bulk crystal.
The SiClone100 furnace is equipped with a state-of-the-art control system,
which helps to automate the growth process by integrating the furnace
electronics into the human-machine interface (HMI) control. The SiClone100 uses
a bottom loading design making it easy to load the hot zone. The control system
provides increased flexibility for users to customize process recipes and
control key production parameters such as temperature, profile, ramp and gas
flow, which improves run-to-run control repeatability thus helping to lower
manufacturing costs. GT's onsite engineering and support help customers quickly
ramp to volume production.
The company continues to expect SiC furnace sales to contribute to less than 1%
of its calendar year 2013 revenue and expects the SiC revenue ramp in 2014 and
beyond to develop at a gradual pace given the lengthy design cycle associated
with new power devices.
About GT Advanced Technologies Inc.
GT Advanced Technologies Inc. is a diversified technology company with
innovative crystal growth equipment and solutions for the global solar, LED and
electronics industries. Our products accelerate the adoption of new advanced
materials that improve performance and lower the cost of manufacturing. For
additional information about GT Advanced Technologies, please visit
www.gtat.com.
Forward-Looking Statements
Certain of the information in this press release relate to the Company's future
expectations, plans and prospects for its business and industry that constitute
'forward-looking statements' for the purposes of the safe-harbor provisions of
the Private Securities Litigation Reform Act of 1995, including but not limited
to: the ability of the Company to successfully market and sell the SiClone100
furnace to customers; the ability of the Company to successfully develop future
generations of the SiC furnace that are capable of producing larger SiC wafers;
the likelihood of sales of SiC furnaces contributingto 2013 revenue; and the
likelihood that sales of SiC furnaces will grow in 2014 and beyond. These
forward-looking statements are not a guarantee of performance and are subject
to a number of uncertainties and other factors, many of which are outside the
Company's control, which could cause actual events to differ materially from
those expressed or implied by the forward looking statements. Other factors
that may cause actual events to differ materially from those expressed or
implied by our forward-looking statements include general economic conditions
and the tightening credit market having an adverse impact on demand for the
Company's products, technological changes could render existing products or
technologies obsolete, the Company may be unable to protect its intellectual
property rights, competition from other manufacturers may increase, exchange
rate fluctuations and conditions in the credit markets and economy may reduce
demand for the Company's products and various other risks as outlined in GT
Advanced Technologies Inc.'s filings with the Securities and Exchange
Commission, including the statements under the heading 'Risk Factors' in the
company's quarterly report on Form 10-Q for the three month period ended March
30, 2013. Statements in this press release should be evaluated in light of
these important factors. The statements in this press release represent GT
Advanced Technologies Inc.'s expectations and beliefs as of the date of this
press release. GT Advanced Technologies Inc. anticipates that subsequent events
and developments may cause these expectations and beliefs to change. GT
Advanced Technologies Inc. is under no obligation to, and expressly disclaims
any such obligation to, update or alter its forward-looking statements, whether
as a result of new information, future events, or otherwise.
CONTACT: Media
Jeff Nestel-Patt
jeff.nestelpatt(at)gtat.com
603-204-2883
Investors/Analysts
Ryan Flaim
ryan.flaim(at)gtat.com
603-681-3869
News Source: NASDAQ OMX
01.07.2013 Dissemination of a Corporate News, transmitted by DGAP -
a company of EQS Group AG.
The issuer is solely responsible for the content of this announcement.
DGAP's Distribution Services include Regulatory Announcements,
Financial/Corporate News and Press Releases.
Media archive at www.dgap-medientreff.de and www.dgap.de
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Language: English
Company: GT Advanced Technologies
United States
Phone:
Fax:
E-mail:
Internet:
ISIN: US36191U1060
WKN:
End of Announcement DGAP News-Service
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Datum: 01.07.2013 - 14:00 Uhr
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