Applied Materials Unveils New Epitaxy Technology for High-Performance Transistors
(Thomson Reuters ONE) -
* New NMOS epitaxy deposition process is essential for faster transistors
inside next-generation mobile processor chips
* NMOS epitaxy boosts transistor speed by the equivalent of half a device node
without increasing off-state power consumption
SANTA CLARA, Calif., July 8, 2012 - Applied Materials, Inc. is extending its
decade-long leadership in epitaxial (epi) technology with a newly developed NMOS
transistor application for its Applied Centura(®) RP Epi system. This capability
supports the industry's move to extend epi deposition from PMOS transistors to
NMOS transistors at the 20nm node, enabling chipmakers to build faster devices
and deliver next-generation mobile computing power.
"Epi is an essential building block for high-performance transistors, delivering
a gain in speed equivalent to that obtained by scaling half a device node," said
Steve Ghanayem, vice president, Transistor and Metallization Products in Applied
Materials' Silicon Systems Group. "By implementing an NMOS epi process in
addition to established PMOS epi, we're enabling foundry customers to further
enhance their transistor performance for next-generation devices."
Since the 90nm device node, strained selective epi films with in-situ doping
have improved mobility and reduced electrical resistance in PMOS transistors,
thereby increasing their speed. Applying selective epi in NMOS transistors
delivers a similar boost, which enhances overall chip performance. By delivering
this enabling technology for both types of transistors, Applied Materials is
supporting industry efforts to meet the ever increasing demand for faster and
greater computational power for multi-functional mobile products. This increase
in performance helps our customers to deliver advanced capabilities, such as
improved multi-tasking and higher-quality graphics and image processing.
The Centura RP Epi system is the production-proven leader in PMOS epi
applications. With today's announcement, the system's portfolio now includes
selective deposition of films in targeted regions of NMOS transistors. Applied
Materials' market-leading, proprietary epi technologies enable deposition of
high quality strained films with precise placement of dopant atoms. Tight
manufacturing process controls result in excellent film properties, uniformity,
and exceptionally low defect levels. These qualities resolve multiple
performance issues, including resistivity of critical electrical layers.
Central to the market leadership of the Applied CenturaRP Epi system is its
integrated low-temperature pre-clean Siconi® technology. Integrating the pre-
clean and epi processes on the same vacuum platform, eliminates queue time and
reduces interfacial contamination by more than an order of magnitude over stand-
alone systems, creating pristine silicon surfaces for defect-free epi crystal
growth.
Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in providing
innovative equipment, services and software to enable the manufacture of
advanced semiconductor, flat panel display and solar photovoltaic products. Our
technologies help make innovations like smartphones, flat screen TVs and solar
panels more affordable and accessible to consumers and businesses around the
world. Learn more at www.appliedmaterials.com.
# # #
Contact:
Connie Duncan (editorial/media) 408.563.6209
Michael Sullivan (financial community) 408.986.7977
PHOTO: The Applied Materials Centura® RP Epi system:
http://hugin.info/143724/R/1714710/569506.jpg
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Source: Applied Materials via Thomson Reuters ONE
[HUG#1714710]
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Datum: 08.07.2013 - 13:30 Uhr
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News-ID 276248
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