Toshiba Electronics Launches Miniature 600V Superjunction Power MOSFETs

Toshiba Electronics Launches Miniature 600V Superjunction Power MOSFETs

ID: 306588

(Thomson Reuters ONE) -


Small outline, low-profile DTMOS-IV devices with ultra-low RDS(ON) save space
and reduce losses in high-speed switching designs.

Düsseldorf, Germany, October 15th, 2013 - /MarketersMedia/ Toshiba Electronics
Europe (TEE) has announced that its next-generation superjunction (SJ) DTMOS-IV
power MOSFET technology is being made available for the first time in small
outline, low-profile DFN packaging. New 600V DTMOS-IV MOSFETs in a DFN package
will be ideal for high-speed switching in power supplies, lighting ballasts and
other applications requiring a space-saving alternative to more conventional
D2PAK and DPAK devices.

Offering current ratings from 9.7A to over 30A, the new devices in the TKxV60W
family of 600V MOSFETs have ultra-low on resistance (RDS(ON)) ratings from
0.38? to just 0.098?. A leading RDS(ON)*Qg figure of merit ensures high-
efficiency switching while a low output capacitance (Coss) supports optimised
operation at light loads. Each device also incorporates an additional sense pin
for direct driver connection.
Toshiba's DTMOS-IV process delivers MOSFETs that exhibit a better temperature
coefficient of RDS(ON) than alternative devices. This allows efficiency benefits
to be realised even during high-temperature operation. As with other devices in
Toshiba's DTMOS-IV family, the new DFN MOSFETs have an optimised gate-drain
capacitance (Cgd) that delivers improved dv/dt switching control. Support for
lower dv/dt ratings also helps to reduce the tendency to ringing in high-speed
switching circuitry.
At 8mm x 8mm the DFN package has an outline that is 20% smaller than a D2PAK
package. A profile of only 0.85mm is almost three times lower than a traditional
DPAK and over five times lower than a D2PAK.
Toshiba uses the deep trench process in its DTMOS-IV fourth generation single-




epitaxial superjunction MOSFET. This allows closer trench pitch compared to the
third-generation (multi-epitaxial) process, leading to a 30% better on-state
resistance for a given die area.
About Toshiba:
Toshiba Electronics Europe (TEE) is the European electronic components business
of Toshiba Corporation, which is ranked among the world's largest semiconductor
vendors. TEE offers one of the industry's broadest IC and discrete product lines
including high-end memory, microcontrollers, ASICs, ASSPs and display products
for automotive, multimedia, industrial, telecoms and networking applications.
The company also has a wide range of power semiconductor solutions as well as
storage products like HDDs, SSDs, SD Cards and USB sticks.
Visit http://www.toshiba-components.com/transistors/mosfet.html for more
information.
Contact Info
Name: Matt Wilkinson
Organization: Pinnacle Marketing Communications Ltd
Originally via MarketersMedia



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Datum: 16.10.2013 - 20:32 Uhr
Sprache: Deutsch
News-ID 306588
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