Applied Materials' Breakthrough Patterning Hardmask Enables Copper Interconnect Scaling
(Thomson Reuters ONE) -
* New hardmask technology is essential for patterning closely spaced, thin
interconnects to 10nm and beyond
* Underscores PVD leadership with system now tool of record for multiple
device generations at leading chipmakers
SANTA CLARA, Calif., May 19, 2015 - Applied Materials, Inc. today announced its
Applied Endura® Cirrus(TM) HTX PVD* system with breakthrough technology for
patterning copper interconnects at 10nm and beyond. As chip features continue to
shrink, innovations in hardmask are required to preserve the pattern integrity
of tightly packed, tiny interconnect structures. With the introduction of this
technology, Applied enables scaling of the TiN* metal hardmask - the industry's
material of choice - to meet the patterning needs of copper interconnects in
advanced microchips.
"Precision engineering of metal hardmask films is key to addressing the
patterning challenges for advanced interconnects," said Dr. Sundar Ramamurthy,
vice president and general manager of Applied's Metal Deposition Products
business unit. "The Cirrus HTX TiN product represents Applied's decades of
expertise in applying PVD technology for engineering TiN film properties.
Incorporating our unique VHF*-based technology offers customers the flexibility
of tuning stress in TiN films from compressive to tensile to overcome their
specific integration challenges."
Today's advanced microchips can pack 20 kilometers of copper wiring in a 100
square millimeter area, stacked in 10 layers with up to 10 billion vias or
vertical connections between layers. The role of the metal hardmask is to
preserve the integrity of these patterned lines and vias in soft ULK*
dielectrics. However, with scaling, the compressive stress from conventional TiN
hardmask layers can cause the narrow lines patterned in ULK films to deform or
collapse. The tunable Cirrus HTX TiN hardmask with high etch selectivity
delivers superior CD* line width control and via overlay alignment resulting in
yield improvement.
This breakthrough in TiN hardmask is made possible by precision materials
engineering at the wafer level to produce a high density, low-stress film.
Combining exceptional film thickness uniformity with low defectivity on a proven
Endura platform, the Cirrus HTX system addresses the stringent high volume
manufacturing needs of patterning multiple interconnect layers.
Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in precision
materials engineering solutions for the semiconductor, flat panel display and
solar photovoltaic industries. Our technologies help make innovations like
smartphones, flat screen TVs and solar panels more affordable and accessible to
consumers and businesses around the world. Learn more at
www.appliedmaterials.com.
(*)PVD=physical vapor deposition; TiN=titanium nitride; VHF=very high frequency;
ULK=ultra-low k; CD=critical dimension
# # #
Contact:
Connie Duncan (editorial/media) 408.563.6209
Michael Sullivan (financial community) 408.986.7977
PHOTO: Applied Endura® Cirrus HTX PVD System:
http://hugin.info/143724/R/1922305/689113.jpg
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originality of the information contained therein.
Source: Applied Materials via GlobeNewswire
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Datum: 19.05.2015 - 09:05 Uhr
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