Advanced Semiconductor Technology from STMicroelectronics Underlies Tomorrow's Mobile Network Infrastructures
(Thomson Reuters ONE) -
ST's BiCMOS-based RF transceiver enables mobile-network backhaul data rates
above 10Gbps while increasing spectrum efficiency in millimeter-wave bands
Geneva, July 28, 2015 - STMicroelectronics' advanced BiCMOS55 SiGe[1] technology
has been selected by the European E3NETWORK R&D initiative for developing
energy-efficient, high-capacity transmission systems in next-generation mobile
networks.
Skyrocketing mobile-data usage requires networks to support greater capacity and
higher data rates. This places new challenges on the backhaul infrastructure,
accelerating the transition to advanced network architectures, such as
Heterogeneous Network and Cloud RAN (Radio Access Network), and higher frequency
bands (such as the E-band[2]), where more spectrum is available to support
faster data-rate channels.
To build these super-efficient mobile networks, equipment manufacturers need
high-performance electronic components that combine large-scale chip
integration, reduced power consumption, and optimized cost. The E3NETWORK
project leverages the integration and power advantages of ST's BiCMOS55 SiGe
technology delivering Heterojunction Bipolar Transistors (HBT) with F(t) up to
320GHz in 55nm lithography. This technology allows the integration of a high-
frequency analog section with high-performance, dense digital blocks such as
logic, AD/DA converters, and memories.
E3NETWORK is designing an integrated E-band transceiver using ST's BiCMOS55
technology for fronthaul and backhaul infrastructure, which enables digital
multi-level modulations, highly focused "pencil-beam" transmissions, and data
rates above 10Gbps. The pencil-beam property facilitates a high degree of
frequency reuse in the deployment of backhaul and fronthaul links, while
preserving the spectrum efficiency over the millimeter-wave interval.
An EU project within the Seventh Framework program, E3NETWORK ("Energy efficient
E-band transceiver for backhaul of the future networks") brings together a
consortium of companies including CEIT (Spain), Fraunhofer (Germany), Alcatel
Lucent (Italy), CEA (France), INXYS (Spain), OTE (Greece), SiR (Germany), Sivers
IMA (Sweden), and STMicroelectronics (Italy).
Note to Editors:
ST's BiCMOS technology combines the strengths of two different processes into a
single chip: bipolar transistors offer high speed and gain, which are critical
for high-frequency analog sections, whereas CMOS devices excel for constructing
simple, low-power logic gates.
By integrating the RF, analog, and digital parts on a single chip, ST's BiCMOS55
SiGe devices drastically reduce the number of external components while
optimizing power consumption.
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a positive and
innovative contribution to people's life. By getting more from technology to get
more from life, ST stands for life.augmented.
In 2014, the Company's net revenues were $7.40 billion. Further information on
ST can be found at www.st.com.
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz(at)st.com
--------------------------------------------------------------------------------
[1] 55nm Bi-polar Complementary Metal-Oxide-Semiconductor Silicon-Germanium
[2] The 71-76 and 81-86 GHz bands (widely known as "E-band") are permitted
worldwide for ultra-high-capacity point-to-point communications
ST BiCMOS Selected by E3NETWORK:
http://hugin.info/152740/R/1941640/702009.pdf
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Source: STMicroelectronics via GlobeNewswire
[HUG#1941640]
Unternehmensinformation / Kurzprofil:
Datum: 28.07.2015 - 15:00 Uhr
Sprache: Deutsch
News-ID 409650
Anzahl Zeichen: 4942
contact information:
Town:
Geneva
Kategorie:
Business News
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