STMicroelectronics 28nm FD-SOI Technology Hits 3GHz Operating Speed
(Thomson Reuters ONE) -
Momentum builds as Fast, Simple and Cool technology proves its abilities
Geneva, February 20, 2013 - STMicroelectronics (NYSE: STM), a global
semiconductor leader serving customers across the spectrum of electronics
applications, announced today the achievement of another major milestone in its
testing of its 28nm FD-SOI Technology Platform. Following the Company's December
announcement of the successful manufacturing of System on Chip (SoC) integrated
circuits, ST today announced that application-processor engine devices
manufactured at the Company's Crolles, France fab, were capable of operating at
3GHz with even greater power efficiency at a given operating frequency than
alternate technologies.
This announcement follows on the heels of recent announcements from other
organizations to utilize FD-SOI technologies. Moore's Law-the observation that
the number of transistors on a chip doubled about every two years-has driven the
semiconductor industry over the past 50 years to shrink the size of the
transistors, which are essentially miniature on/off switches. The increased
density from these size reductions have given consumers the explosion of new and
more exciting features at lower-cost that we've come to expect. In parallel,
these new features are able to operate at clock speeds that allow the phones to
respond to your commands-by keypad, touchpad, and now voice-almost before you
finish expressing the command.
Now, as those transistors shrink to nanoscale dimensions where about 450
transistors can fit within the diameter of a human hair[1], physics are
challenging the traditional high-speed and low-power advantages of planar CMOS
technology manufactured on bulk silicon wafers. FD-SOI technology is a major
breakthrough in the pursuit of miniaturization of electronic circuits, and the
achievement of 3GHz operating speed for an application-processor engine presages
the adoption of FD-SOI in portable equipment, digital still cameras, gaming and
ASICs for a range of applications. Of the next-generation process technologies,
FD-SOI alone has proven its ability to meet the industry's highest performance
and lowest power demands that are vital to delivering graphics and multimedia
that amaze without sacrificing battery life.
"As we had anticipated, FD-SOI is proving to be fast, simple and cool; we had
fully expected to see 3GHz operating speeds, the design approach is very
consistent with what we had been doing in bulk CMOS, and, with the benefits of
fully depleted channels and back biasing, the low-power requirements are also
meeting our expectations," said Jean-Marc Chery, Executive Vice President,
General Manager Digital Sector, and Chief Technology and Manufacturing Officer
of STMicroelectronics.
Reinforcing the point of simplicity, ST has found porting Libraries and Physical
IPs from 28nm Bulk CMOS to 28nm FD-SOI to be straightforward, and the process of
designing digital SoCs with conventional CAD tools and methods in FD-SOI to be
identical to Bulk, due to the absence of MOS-history-effect. FD-SOI enables
production of highly energy-efficient devices, with the dynamic body-bias
allowing instant switch to high-performance mode when needed and return to a
very-low-leakage state for the rest of the time - all in a totally transparent
fashion for the Application Software, Operating System, and the Cache Systems.
Finally, FD-SOI can operate at significant performance at low voltage with
superior energy efficiency versus Bulk CMOS.
ST will be demonstrating the FD-SOI technology at its booth (Hall 7 E110) at
Mobile World Congress in Barcelona, Feb 25-28.
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power technologies and multimedia convergence
applications. From energy management and savings to trust and data security,
from healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.
In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at www.st.com.
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz(at)st.com
--------------------------------------------------------------------------------
[1] FD-SOI transistors have a drawn channel length of 28nm and a pitch
(transistor to transistor) of 113nm, allowing almost 450 transistors to fit
across a 50,000nm-diameter human hair.
ST 28nm FD-SOI Technology Hits 3GHz_FINAL:
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Datum: 20.02.2013 - 09:00 Uhr
Sprache: Deutsch
News-ID 231178
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