New Micron "Ultra" Memory Products Enable Next-Generation Automotive Systems

New Micron "Ultra" Memory Products Enable Next-Generation Automotive Systems

ID: 379132

(Thomson Reuters ONE) -


Ultra Fast, Reliable and High-Temperature Automotive-Grade Parallel NOR Flash
and LPDDR4 DRAM Fuel the Memory Needs of Next-Generation Cars

BOISE, Idaho, March 17, 2015 (GLOBE NEWSWIRE) -- Micron Technology, Inc.
(Nasdaq:MU), today announced the availability of ultra reliable, ultra high-
speed and ultra high-temperature parallel NOR Flash and low-power DDR4 (LPDDR4)
DRAM to meet the increasing memory requirements for the automotive market
segment. Micron's G18 NOR family offers the industry's highest-performance
parallel NOR, while Micron's automotive-grade LPDDR4 solutions are an industry-
first.

These new products meet the needs of automotive applications that require ultra
high speed. The G18 family's high performance (266 MB/s) enables faster boot and
code execution for higher-density applications, while LPDDR4 enables 33 percent
higher peak bandwidth than DDR4. Additionally, Micron's new solutions deliver
long-lasting reliability and meet ISO/TS certification requirements-with the G18
family enabling three times faster throughput over quad SPI NOR, and the LPDDR4
products undergoing additional package-level burn-in testing. Furthermore,
Micron's G18 NOR products have options that meet the industrial temperature (IT)
range of -40 to 85(°)C and the automotive-grade automotive temperature (AAT)
range of -40 to 105(°)C. The LPDDR4 products have options that meet the
automotive-grade industrial temperature (AIT) range of -40 to 95(°)C, as well as
some future options that will meet the automotive-grade ultra temperature (AUT)
range of -40C to 125(°)C, which is the highest operating temperature range in
the industry, expected to be available in 2016.

"With consumers expecting smartphone connectivity in their car infotainment
systems, along with advanced new automotive features like driver assist systems,
memory requirements in the connected car are increasing," said Giorgio Scuro,




General Manager of Micron's Automotive Division. "Micron is focused on
delivering leading memory technologies such as parallel NOR and LPDDR4 to
enhance the driving experience."

"With next-generation cars having self-driving functionality, semiconductors
need to be designed for the automotive environment, which have more strict
standards," said Luca De Ambroggi, principal analyst for Automotive
Semiconductors at IHS. "Micron's new family of products for the automotive
market has been specified having this in mind, to enable next-generation cars."

Micron G18 Family

Micron's G18 Parallel NOR Flash solutions are ideal for automotive applications
that require fast, reliable code storage and execution when milliseconds matter
in boot performance and beyond, like advanced driver assistance systems (ADAS)
rear-view cameras, which need fast boot speed for instant readiness. G18 NOR
Flash delivers read speeds up to 266 MB/s and fast load times that meet 200mus
boot requirements; it's also three times faster than quad SPI NOR. G18 NOR Flash
provides low 1.8V core and I/O voltage for better power consumption in a small
package. The G18 line also provides A/D MUX and AA/D MUX configurations that
reduce I/O ball count by more than 50 percent over traditional parallel NOR
products, providing the best bandwidth per pin. In addition to enabling
automotive solutions, G18 devices are ideal for equipment automation, enterprise
server, and networking applications as well as wearable devices, digital still
cameras, medical test equipment, and more.

Micron Automotive LPDDR4 Family

LPDDR4 builds upon the ultra-efficient foundation of LPDDR3 to make significant
improvements in performance, power, latency and physical space. Micron's
Automotive LPDDR4 solutions introduce new energy efficiencies while providing
twice the bandwidth of LPDDR3, making it an important technology for enabling
next-generation automotive applications. LPDDR4 enables data transfer rates up
to 4.266 GT/s, which provides greater peak bandwidth using less energy per bit
than LPDDR3. The faster I/O data rate delivers speeds up to 3200 Mb/s to enable
displays with up to 4K x 2K resolution and 3D graphics on automotive
infotainment systems, as well as more advanced ADAS capabilities for collision
avoidance and safer driving. These efficiency gains apply not just to peak
bandwidth but to lower bandwidth use cases as well.

Follow us online! Take part in Micron's social conversations where we're talking
all things storage and memory:

* Blog: www.micron.com/about/blogs
* Twitter: www.twitter.com/MicronTech
* LinkedIn: www.linkedin.com/company/micron-technology
* YouTube(TM): www.youtube.com/microntechnology

About Micron

Micron Technology, Inc., is a global leader in advanced semiconductor systems.
Micron's broad portfolio of high-performance memory technologies-including DRAM,
NAND and NOR Flash-is the basis for solid state drives, modules, multichip
packages and other system solutions. Backed by more than 35 years of technology
leadership, Micron's memory solutions enable the world's most innovative
computing, consumer, enterprise storage, networking, mobile, embedded and
automotive applications. Micron's common stock is traded on the NASDAQ under the
MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.

©2015 Micron Technology, Inc. All rights reserved. Information subject to change
without notice. Micron and the Micron orbit logo are trademarks of Micron
Technology, Inc. All other trademarks are the property of their respective
owners.

CONTACT: Micron Media Contact:
         Greg Wood
         Zeno Group for Micron
         650-801-7958
         Greg.Wood(at)zenogroup.com




This announcement is distributed by GlobeNewswire on behalf of
GlobeNewswire clients. The owner of this announcement warrants that:
(i) the releases contained herein are protected by copyright and
other applicable laws; and
(ii) they are solely responsible for the content, accuracy and
originality of the information contained therein.

Source: Micron Technology, Inc. via GlobeNewswire
[HUG#1903969]




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Datum: 17.03.2015 - 14:00 Uhr
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News-ID 379132
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