IQE awarded contract with TriQuint Semiconductor to develop radically
enhanced GaN products for US g
(Thomson Reuters ONE) - IQE plc30 Oct 2009IQE plc (AIM: IQE, "the Group") the leading manufacturer of advancedsemiconductor wafers to the global semiconductor industry, announcesthat it has been contracted by a leading US RF products and foundryservice provider TriQuint Semiconductor (Nasdaq: TQNT) to provide itsGallium Nitride (GaN) wafer products for the creation of complex,high dynamic range circuits for future defence and aerospaceapplications.IQE's New Jersey operation sub-contract Gallium Nitride (GaN) waferproducts to TriQuint as part of an $16.2 million Defence AdvancedResearch Projects Agency (DARPA) multi-year Gallium Nitride (GaN) R&Dcontract. The programme aims to advance GaN research and develop newgenerations of compound semiconductor circuits through the NitrideElectronic NeXt-Generation Technology (NEXT) program."GaN is already recognized for its ability to handle more power persquare millimeter than other semiconductor technologies like galliumarsenide, and much more so than silicon. Yet even with the advancesTriQuint has pioneered, today's analogue GaN technology has frequencyand power limits."NEXT circuits will be `game-changing` technology that couldradically improve performance in defence and aerospace applicationslike phased array radar and communications. NEXT calls for complexdigital GaN circuits that also have very high breakdownvoltages-something that silicon can't do, and that is also beyond thescope of today's other semiconductor processes," said TriQuint'sPrincipal Investigator, Senior Fellow Dr. Paul Saunier.Alex Ceruzzi, VP and General Manager of IQE's New Jersey facilitycommented:"IQE and TriQuint have enjoyed a close relationship over many yearsand our role in this programme clearly demonstrates IQE's ability toprovide world class materials across a broad RF product portfolio."The four and half year NEXT programme lead by TriQuint will utiliseIQE's GaN wafer product expertise with the ultimate aim of developingand producing advanced semiconductor chips with operating frequenciesup to 500GHz."IQE's New Jersey facility is the leading GaN HEMT epi foundry, andprovides a complete portfolio of RF products, ranging from highvolume HEMTs, HBTs and BiFETs to advanced GaN based products. TheGroup's Gallium Nitride production capability was recently increasedthrough the acquisition of UK-based NanoGan Limited announced earlierin October 2009.(see alsohttp://www.triquint.com/contacts/press/dspPressRelease.cfm?pressid=422).Contacts:Sales/Technical: IQE RF (+1 732 271 5990)Ivan EliashevichShiping GuoPress: IQE plc (+44 29 2083 9400)Chris MeadowsNote to EditorsFACTS ABOUT IQEIQE is the leading global supplier of advanced semiconductor waferswith products that cover a diverse range of applications, supportedby an innovative outsourced foundry services portfolio that allowsthe Group to provide a 'one stop shop' for the wafer needs of theworld's leading semiconductor manufacturers.IQE uses advanced crystal growth technology (epitaxy) to manufactureand supply bespoke semiconductor wafers ('epi-wafers') to the majorchip manufacturing companies, who then use these wafers to make thechips which form the key components of virtually all high technologysystems. IQE is unique in being able to supply wafers using all ofthe leading crystal growth technology platforms.IQE's products are found in many leading-edge consumer,communication, computing and industrial applications, including acomplete range of wafer products for the wireless industry, such asmobile handsets and wireless infrastructure, Wi-Fi, WiMAX, basestations, GPS, and satellite communications; optical communications,optical storage (CD, DVD), laser optical mouse, laser printers &photocopiers, thermal imagers, leading-edge medical products,barcode, ultra high brightness LEDs, a variety of advanced siliconbased systems and high efficiency concentrator photovoltaic (CPV)solar cells.The manufacturers of these chips are increasingly seeking tooutsource wafer production to specialist foundries such as IQE inorder to reduce overall wafer costs and accelerate time to market.IQE also provides bespoke R&D services to deliver customisedmaterials for specific applications and offers specialist technicalstaff to manufacture to specification either at its own facilities oron the customer's own sites. The Group is also able to leverage itsglobal purchasing volumes to reduce the cost of raw materials. Inthis way IQE's outsourced services, provide compelling benefits interms of flexibility and predictability of cost, therebysignificantly reducing operating risk.IQE operates seven facilities located in Cardiff (two), Milton Keynesand Bath in the UK; in Bethlehem, Pennsylvania and Somerset, NewJersey in the USA; and Singapore. The Group also has 11 sales officeslocated in major economic centres worldwide.FACTS ABOUT TRIQUINTFounded in 1985, we "Connect the Digital World to the GlobalNetwork"® by supplying high-performance RF modules, components andfoundry services to the world's leading communications companies.Specifically, TriQuint is a supplier in the top five mobile phonemanufacturers' products, and is a leading gallium arsenide (GaAs)supplier to major defense and space contractors. TriQuint createsstandard and custom products using advanced processes that includegallium arsenide, gallium nitride (GaN), surface acoustic wave (SAW)and bulk acoustic wave (BAW) technologies to serve diverse marketsincluding wireless handsets, laptops, GPS/PND, base stations,broadband communications and military. TriQuint is also the leadresearcher in a multi-year DARPA program to develop advanced GaNamplifiers. TriQuint, as named by Strategy Analytics1, is thenumber-three worldwide leader in GaAs devices and the world's largestcommercial GaAs foundry. TriQuint has ISO9001 certified manufacturingfacilities in Oregon, Texas, and Florida and a production plant inCosta Rica; design centers are located in North America and Germany.Visit TriQuint at www.triquint.com/rf to receive new productinformation and to register for our newsletters.1 Announced February 2009 and May 2009, respectively.This announcement was originally distributed by Hugin. The issuer is solely responsible for the content of this announcement.
Bereitgestellt von Benutzer: hugin
Datum: 30.10.2009 - 08:01 Uhr
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