IEDM 2009 Conference: IQE and Intel presented joint paper on the
development of InGaAs on Si devices
(Thomson Reuters ONE) - IQE plc9 December 2009IQE and Intel Corporation presented a joint paper on the developmentof InGaAs on Si devices with high-K gate dielectrics for low powerlogic applications. The paper was presented byDr. Marko Radosavljevic of Intel Corporation at the InternationalElectron Devices Meeting (IEDM) held in Baltimore, MD from 7th to 9thDecember 2009. The paper presented the results of work carried out byscientists at Intel's Technology and Manufacturing Group in Oregonand IQE's epitaxial growth facility in Bethlehem, Pennsylvania.The ever increasing performance requirements of modern-daymicroprocessors has for decades been achieved by the continuousscaling of Si CMOS devices, but this enhanced performance is at thecost of increased power consumption. In recent years, scientists havebeen looking towards materials based solutions to ensure thattechnology can keep up with the demands of following Moore's Law.Compound semiconductor-based Quantum Well Field Effect Transistor(QWFET) provide the potential for achieving high performance and lowpower consumption in future generation microprocessor applications,and the integration with Si transistors on a single chip provides theoptimal solution.The paper, entitled: "Advanced High-K Gate Dielectric forHigh-Performance Short-Channel In0.7Ga0.3As Quantum Well Field EffectTransistors on Silicon Substrate for Low Power Logic Applications,"relates to the development of novel technology for producing leadingedge transistor devices for future generation high-speed, ultra-lowpower digital logic applications.IQE's facility in Bethlehem, PA, produced the blanket InGaAs QWFETepiwafers grown on Si substrates using molecular beam epitaxy (MBE).Intel Corporation used the blanket epiwafers for their transistordesign and fabrication.Steve Gergar, General Manager of IQE's Pennsylvania operationcommented:"IQE has played a key role in the development of epitaxial materialsupon which Intel has fabricated devices which demonstrate improveddevice characteristics and significantly higher transistor driveperformance whilst maintaining low power consumption."The results of this work demonstrate IQE's strength in advancedepitaxial material engineering built on many years of experience withIII-V materials from research and development through to high-volumeproduction. Based on this successful research to-date, IQE looksforward to continued work with Intel in the area of III-V on Siintegration for future generation high performance digitalapplications."Contacts:Technical/Sales: IQE Inc (+1 610 972 1488)Amy LiuPress: IQE plc (+44 29 2083 9400)Chris MeadowsNote to EditorsIQE is the leading global supplier of advanced semiconductor waferswith products that cover a diverse range of applications, supportedby an innovative outsourced foundry services portfolio that allowsthe Group to provide a 'one stop shop' for the wafer needs of theworld's leading semiconductor manufacturers.IQE uses advanced crystal growth technology (epitaxy) to manufactureand supply bespoke semiconductor wafers ('epi-wafers') to the majorchip manufacturing companies, who then use these wafers to make thechips which form the key components of virtually all high technologysystems. IQE is unique in being able to supply wafers using all ofthe leading crystal growth technology platforms.IQE's products are found in many leading-edge consumer,communication, computing and industrial applications, including acomplete range of wafer products for the wireless industry, such asmobile handsets and wireless infrastructure, Wi-Fi, WiMAX, basestations, GPS, and satellite communications; optical communications,optical storage (CD, DVD), laser optical mouse, laser printers &photocopiers, thermal imagers, leading-edge medical products,barcode, ultra high brightness LEDs, a variety of advanced siliconbased systems and high efficiency concentrator photovoltaic (CPV)solar cells.The manufacturers of these chips are increasingly seeking tooutsource wafer production to specialist foundries such as IQE inorder to reduce overall wafer costs and accelerate time to market.IQE also provides bespoke R&D services to deliver customisedmaterials for specific applications and offers specialist technicalstaff to manufacture to specification either at its own facilities oron the customer's own sites. The Group is also able to leverage itsglobal purchasing volumes to reduce the cost of raw materials. Inthis way IQE's outsourced services, provide compelling benefits interms of flexibility and predictability of cost, therebysignificantly reducing operating risk.IQE comprises six operating facilities located in Cardiff (two)and Milton Keynes in the UK; in Bethlehem, Pennsylvania and Somerset,New Jersey in the USA; and Singapore. The Group also has 11 salesoffices located in major economic centres worldwide.This announcement was originally distributed by Hugin. The issuer is solely responsible for the content of this announcement.
Datum: 09.12.2009 - 08:00 Uhr
Sprache: Deutsch
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