STMicroelectronics Reveals New Technology Platform for RF Front End of Wireless Devices
(Thomson Reuters ONE) -
Optimized RF Silicon-On-Insulator (SOI) process greatly reduces size of multi-
band radios for 4G and other high-speed wireless connections
Geneva, June 19, 2013 - Booming demand for faster wireless broadband connections
is calling for increasingly complex circuitry inside devices such as smartphones
and tablets. STMicroelectronics (NYSE: STM), a global semiconductor leader
serving customers across the spectrum of electronics applications, is addressing
that demand by perfecting an advanced component process technology specifically
optimized to increase performance and reduce the size of the RF (radio
frequency) front-end of mobile devices.
In wireless devices, the RF front-end circuit is typically built using
individual amplifiers, switches and tuners. As new high-speed standards such as
4G mobile and Wi-Fi (IEEE 802.11ac) use multiple frequency bands to increase
data throughput, the latest equipment requires additional front-end circuitry.
While current 3G phones use up to five frequency bands, the 3GPP[1] standards
for next-generation 4G LTE support up to 40 bands. Conventional separate
components dramatically increase overall size whereas ST's new manufacturing
process, known as H9SOI_FEM, allows production of complete integrated front-end
modules.
This process is an evolution of the H9SOI Silicon-on-Insulator process; a
groundbreaking technology introduced by ST in 2008 and subsequently used by
customers to produce more than 400 million RF switches for mobile phones and Wi-
Fi applications. Building on that experience, ST has optimized H9SOI for
creating integrated front-end modules, resulting in today's announcement of
H9SOI_FEM offering the industry's best figure of merit for antenna switch and
antenna tuning devices with Ron x Coff at 207fs[2]. ST has also invested to
ensure suitable manufacturing capacity for even the most demanding of customers.
From a commercial point of view, smartphones featuring high-speed multi-band
wireless are driving booming demand for RF front-end components, particularly as
integrated modules. The number of RF devices in a smartphone is roughly three
times the number in an entry-level 2G/3G phone, while smartphone shipments are
currently over one billion units annually and growing at around 30% according to
analysis by Prismark. Additionally OEMs require suppliers to provide smaller,
thinner components with higher power efficiency. ST sees opportunities for
discrete components, as well as integrated power-amplifier/switch and power-
amplifier/switch/tuner modules based on its new best-in-class H9SOI_FEM process.
"The H9SOI_FEM dedicated process enables our customers to develop state of the
art front-end modules that are half the size or smaller compared to today's
front-end solutions," said Flavio Benetti, General Manager of the Mixed Process
Division of STMicroelectronics. "Moreover, we have achieved a simplified process
flow to enable extremely short overall lead-times and supply flexibility, which
are crucial for end customers in this market."
ST is now ready to start working with customers on new designs using H9SOI_FEM.
Volume ramp-up is expected by the end of this year.
Further technical information:
The H9SOI_FEM process is a 0.13µm technology with dual-gate 1.2V and 2.5V
MOSFETs. Unlike conventional SOI processes, such as those used for discrete
devices like RF switches, H9SOI_FEM supports multiple technologies such as GO1
MOS, GO2 MOS, and optimized NLDMOS. This allows H9SOI_FEM to support full
monolithic integration of all key functions of an RF front end, which comprise
RF switches, Low Noise Amplifier (LNA), multi-mode multi-band cellular Power
Amplifiers (PAs), diplexers, RF coupling, antenna tuning and RF energy-
management functions.
GO1 MOS is preferred for very-high-performance LNAs, capable of sustaining very
low Noise Figure with 1.4dB (at) 5GHz and providing threshold frequency (Ft) of
60GHz permitting 5GHz designs with safety margin.
In addition to GO2 CMOS, GO2 NMOSis widely used with RF switches and enables
ST's process to offer the industry's best figure of merit for the antenna switch
and antenna-tuning devices, with on-resistance x capacitance (Ron x Coff) of
207fs.
GO2 high-voltage MOS allows the integration of PA and energy-management
functions. The optimized NLDMOS allows PAs to achieve Ft of 36GHz and efficiency
of 60% at saturated low-band GSM power. For energy management, PLDMOS technology
with 12V breakdown allows the device to be connected directly to the battery.
The performance of integrated passive components has also been optimized by
depositing to three or four aluminum layers and also thick copper when needed.
H9SOI_FEM is suitable both for devices targeting the low end of the market,
where low cost and extensive integration are crucial, as well as the high-end
smartphone segment. High-end products typically require a combination of many
frequency bands to support not only 2G, 3G and 4G standards, but also various
other wireless connectivity standards such as Bluetooth, Wi-Fi, GPS and NFC
(Near-Field Communication) for contactless payments.
About STMicroelectronics
ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power and automotive products and embedded processing
solutions. From energy management and savings to trust and data security, from
healthcare and wellness to smart consumer devices, in the home, car and office,
at work and at play, ST is found everywhere microelectronics make a positive and
innovative contribution to people's life. By getting more from technology to get
more from life, ST stands for life.augmented.
In 2012, the Company's net revenues were $8.49 billion. Further information on
ST can be found at www.st.com.
For Press Information Contact:
STMicroelectronics
Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz(at)st.com
--------------------------------------------------------------------------------
[1] 3rd Generation Partnership Project
[2] 1 femtosecond = 0.000001 nanosecond
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Source: STMicroelectronics via Thomson Reuters ONE
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Datum: 19.06.2013 - 15:00 Uhr
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News-ID 271321
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