ASM Qualifies New Higher-k Gate Process for 14nm Manufacturing
(Thomson Reuters ONE) -
Milestone Achieved at Key Customer Development Fab
ALMERE, The Netherlands, December 5, 2011 -ASM International N.V. (www.asm.com)
(NASDAQ: ASMI and Euronext Amsterdam: ASM), the leader in atomic layer
deposition (ALD) of high-k gate materials, today announced the successful
demonstration of a new 14nm high-k gate dielectric process that achieved less
than 6 angstroms equivalent oxide thickness (EOT) at a customer's 14nm R&D line,
an improvement of about 40% from the current advanced nodes. The new high-k
process improves device performance by enabling faster switching and lower
leakage current, while reconfirming the extendibility of hafnium based high-k
dielectrics. Using ASM's most advanced Pulsar ALD tool, a hafnium based
material with a higher-k value than the current baseline was qualified at the
customer's R&D facility.
"ASM was the first to introduce hafnium-based high-k dielectrics for transistor
gates, and we are now working with key device manufacturing leaders on scaling
next-generation high-k metal gate technology," said Glen Wilk, Sr. Director of
ALD Products at ASM. "The new process leverages ASM's extensive understanding of
high-k metal gates, our technology leadership in ALD, and the extendibility of
our Pulsar ALD process module. Together, these three factors give ASM a clear
advantage in providing our customers with the smoothest transition to
manufacturing nodes below 20nm, for both planar and 3D devices."
Developed on the Pulsar ALD tool without the need for additional clustered
process steps, the new process achieves less than 6Å EOT while maintaining gate
leakage below 1A/cm(2) to meet 14 nm high-k metal gate (HKMG) logic technology
requirements.
About ASM International
ASM International N.V., headquartered in Almere, the Netherlands, and its
subsidiaries design and manufacture equipment and materials used to produce
semiconductor devices. ASM International and its subsidiaries provide production
solutions for wafer processing (Front-end segment) as well as assembly and
packaging (Back-end segment) through facilities in the United States, Europe,
Japan and Asia. ASM International's common stock trades on NASDAQ (symbol ASMI)
and the Euronext Amsterdam Stock Exchange (symbol ASM). For more information,
visit ASMI's website atwww.asm.com.
Safe Harbor Statement under the U.S. Private Securities Litigation Reform Act of
1995: All matters discussed in this statement, except for any historical data,
are forward-looking statements. Forward-looking statements involve risks and
uncertainties that could cause actual results to differ materially from those in
the forward-looking statements. These include, but are not limited to, economic
conditions and trends in the semiconductor industry generally and the timing of
the industry cycles specifically, currency fluctuations, corporate transactions,
financing and liquidity matters, the success of restructurings, the timing of
significant orders, market acceptance of new products, competitive factors,
litigation involving intellectual property, shareholder and other issues,
commercial and economic disruption due to natural disasters, terrorist activity,
armed conflict or political instability, epidemics and other risks indicated in
the Company's filings from time to time with the U.S. Securities and Exchange
Commission, including, but not limited to, the Company's reports on Form 20-F
and Form 6-K. The Company assumes no obligation nor intends to update or revise
any forward-looking statements to reflect future developments or circumstances.
ASM International:
Erik Kamerbeek
Investor Relations
+31 881008500
Erik.Kamerbeek(at)asm.com
Mary Jo Dieckhaus
Investor Relations
+1 212-986-2900
MaryJo.Dieckhaus(at)asm.com
ASM qualifies new higher-k gate process:
http://hugin.info/132090/R/1569007/487663.pdf
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Source: ASM International NV via Thomson Reuters ONE
[HUG#1569007]
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Datum: 05.12.2011 - 14:00 Uhr
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News-ID 94001
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